Topologie | Gegentaktwandler (Halbbrücken) |
Eingangsspannung | 12 V |
Ausgang 1 | 1 A |
IC-Revision | A |
The LMG2650EVM-100 is designed to provide a quick and easy platform to evaluate TI integrated GaN devices in any half-bridge topology. The board is designed to be interfaced with a larger system using the 6 power pins and 12 digital pins on the bottom edge of the board in a socket-style external connection. Power pins form the main switching loop consisting of a high-voltage DC bus, switch node and power ground. The digital pins control the LMG2650 device with PWM gate inputs, provide auxiliary power with low-voltage supplies, and report faults as a digital output. Evaluating the LMG2650EVM-100 performance is most easily demonstrated using a synchronous buck/boost motherboard from TI (LMG342X-BB-EVM). The daughtercard easily plugs into the motherboard and interfaces all power and digital control in an open-loop configuration for full system control. Additionally, a recommended footprint is provided to interface the daughtercard with a custom system for further testing.
Input voltage operation up to 650VSimple open-loop design to evaluate performance of LMG2640Single or dual PWM input on board for PWM signal with variable dead timeHighly integrated GaN power-FET half bridge with low-side current-sense emulation outputConvenient probe points for logic and power stage measurements with oscilloscope probes having short ground spring probes
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![]() | 885012206091 | SPEC | 9 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WCAP-CSGP MLCCs 50 V(DC) | 22 nF | ±10% | 50 | 0603 | -55 °C up to +125 °C | 2.5 | 10 GΩ | X7R Klasse II | 1.6 | 0.8 | 0.8 | 0.4 | 7" Tape & Reel | ||
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Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR (V (DC)) | Bauform | Betriebstemperatur | DF (%) | RISO | Keramiktyp | L (mm) | W (mm) | H (mm) | Fl (mm) | Verpackung | Muster |
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