Texas Instruments SN6505 / LM76003

Beschreibung

This verified reference design provides an overview on how to implement a three-level three-phase SiC based DC:AC T-type inverter stage. Higher switching frequency of 50KHz reduces the size of magnetics for the filter design and enables higher power density. The use of SiC MOSFETs with switching loss ensures higher DC bus voltages of up to 1000V and lower switching losses with a peak efficiency of 99 percent. This design is configurable to work as a two-level or three-level inverter.The system is controlled by a single C2000 microcontroller (MCU), TMS320F28379D, which generates PWM waveforms for all power electronic switching devices under all operating modes.

Eigenschaften

• Rated nominal/max input voltage at 800V/1000VDC
• Max 10kW/10KVA output power at 400VAC 50/60Hz T-type connection
• Operating power factor range from 0.7 lag to 0.7 lead
• High voltage (1200V) SiCMosFET based full bridge inverter for peak efficiency of 99%
• <2% output current THD at full load
• Isolated current sensing using AMC1301 for load current monitoring
• Isolated driver ISO5852S with reinforced isolation for driving High voltage SiC MOSFET and UCC5320S for driving middle Si IGBT

Typische Anwendungen

• Servo drive active frontend, Single phase string inverter, Three Phase String Inverter, Traction inverter motor control, Central inverter, DC fast charging station
• High-voltage direct current (HVDC) power transmission, Power conversion system (PCS)
• Single phase wireless EV charging station, Three phase wireless EV charging station

Weiterführende Informationen

• Produktseite des IC-Herstellers